Vecco GenXplor MBE system for epitaxial growth of Nitrides
Riber 32 for epitaxial growth of oxides
Acid Bench and preparation bench
Semiprobe DC Probe station
MMR temperature variable (70 K-780 K) probe station
Deep level transient spectroscopy (DLTS)
The Lurie Nanofabrication Facility consists of 11,000 ft2 of Class 1000/100/10 cleanroom research space. The lab supports a wide variety of processes including optical and e-beam lithography, direct write mask maker, thin-film deposition (LPCVD, PECVD, ALD, sputtering, e-beam), rapid and tube-furnace thermal processing, reactive ion etching, wet chemical processing, in-lab metrology including AFM, SEM, laser confocal microscopy, profilometry, ellipsometry, and scanning interferometry. The facility recently purchased a new plasma-enhanced ALD tool (Veeco/Cambridge Nanotech Fiji). The lab is equipped with three different wafer bonders. A full equipment list can be found at https://lnf.umich.edu/capabilities/equipment/
The University of Michigan’s Michigan Center for Materials Characterization (MC)2 and Electron Beam MicroAnalysis Lab (EMAL) provide microstructural and microchemical characterization as well as high-resolution imaging, including SEM, FIB, TEM including TEM with in situ heating, STEM, HRTEM, EELS, selected area electron diffraction, EBSD, XEDS, surface and depth-profiling XPS, XRD and GIXRD, as well as atom probe microscopy, atomic force microscopy, and tribo/pico-indentation (http://mc2.engin.umich.edu/techniques/). The Department of Chemistry’s lab capabilities include Raman spectroscopy, FTIR, and UV-vis (http://www.lsa.umich.edu/chem/resources/technicalservices).
Michigan Ion Beam Laboratory (https://mibl.engin.umich.edu/mibl/video-tour/) provides a wide range of capabilities for both surface modification and analysis. The 3 MV Pelletron Tandem accelerator is capable of implantation at energies above 6.5 MeV and to a maximum energy that depends on the ion charge state, for a maximum terminal voltage of 3 MV. The 1.7 MV Tandetron accelerator is capable of implantation at energies above 0.5 MeV and to a maximum energy that depends on the ion charge state, for a maximum terminal voltage of 1.7 MV. A wide variety of ions can be produced by a Torvis type source, a duoplasmatron source, a sputter ion source, a SNICS sputter type source and an ECR source. Currents of up to 55 µA of H + and several µA of metal ions are routinely employed. The implantation end stations operate at pressures in the 10-9 to 10-10 Torr range and samples can be either heated or cooled during irradiation. The 400 kV implanter can produce over 40 different ions at energies from 20 to 400 keV. Its end station has stages for implantation at high temperatures down to liquid nitrogen temperature at pressures of 10-6 to 10-7 Torr. The lab also has the capability to simultaneously perform dual or triple ion irradiations in the Multi-Beam Chamber (MBC) located in the South Target Room (STR). Two or all three accelerators can provide a range of ions that could be implanted at the same time with a pre-determined rate and energy.
A PPMS DynaCool with a 14 T magnet and controlled temperature sweep capability between 1.8 K to 400 K. Ahmadi’s Lab is also equipped with a hydrostratic pressure cell which is compatible with the PPMS and is being used for pressure-dependent Hall measurements.